With an inventive strategy, Samsung is advancing in the field of Selector-Only Memory (SOM) technology. They’re applying cutting-edge computational modeling to identify the most suitable chalcogenide materials for future memory solutions. Their team has investigated more than 4,000 material combinations, whittling it down to 18 that appear to be strong candidates for practical testing.
A Major Innovation in Memory Design
SOM technology represents a significant progression in memory architecture, merging the advantages of non-volatile flash storage with the rapid performance of DRAM. It utilizes chalcogenide materials to function as both memory cells and selectors, eliminating the necessity for separate transistors found in typical phase-change or resistive RAM configurations.
In-Depth Analysis of Material Properties
The research team employed intricate simulations to assess various properties such as bonding characteristics, thermal stability, and electrical performance. They concentrated on important factors like the drift in threshold voltage and the stability of the memory window, which indicates how effectively the device maintains distinct on and off states.
Samsung plans to unveil these results at the International Electron Devices Meeting set for this December in San Francisco. They’re optimistic that this computational method has led them to discover high-performance materials that might have been overlooked by conventional laboratory testing.
Building on Previous Achievements
This work builds on Samsung’s previous presentations at IEDM 2023, where they highlighted a 64Gbit OTS-based SOM featuring remarkably small 16nm memory cells.
