Samsung Electronics will make their inaugural appearance at Beijing Auto Show from April 25-27, showcasing state-of-the-art memory solutions designed specifically to support future automobiles. The exhibition will include three main areas focusing on memory technology - memory for Advanced Driver-Assistance Systems (ADAS) and In-Vehicle Infotainment (IVI).
Advancements In Memory Technology
Samsung recently unveiled their next-generation 10.7Gbps LPDDR5X DRAM memory chips, providing significant 25% performance gains and 30% capacity increases over its predecessors. These advancements allow single package capacities of 32GB - perfect for AI-driven vehicle applications requiring high memory demands. Mass production will commence by the latter half of 2024 following rigorous testing processes.
Enhance in-car experiences
Samsung will showcase their UFS 3.1 flash storage technology at this event, providing storage solutions ranging from 128GB to 1TB with three times faster write speeds compared to its predecessor iteration - providing improved battery life management for electric and autonomous vehicles and seamless downloads with minimal buffering issues. UFS 3.1 can also serve 5G mobile devices such as AR/VR headsets or HD recording devices that require rapid storage solutions such as AR/VR headsets or HD recording devices.
Conclusion
Samsung's participation at Beijing Auto Show marks an essential move toward expanding memory solutions in automotive technology. By unveiling cutting-edge LPDDR5X DRAM and UFS 3.1 flash storage products, they aim to elevate future vehicles featuring AI or other innovative technologies while improving performance, efficiency and user experience.
