Samsung Explores MUF Technology for Next-Gen Server DRAM
Samsung is looking into incorporating molded-in-fill (MUF) technology in its next generation of dynamic random-access memory (DRAM), as per a report from TheElec. This decision indicates Samsung's exploration of innovative methods to boost the performance and efficiency of its memory products. The MUF technology, previously employed by SK Hynix in the production of high-bandwidth memory (HBM), […]
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